A photodetector is made from a semiconductor In 0.53 G a 0.47 A s with E g = 0.73 eV. What is the maximum wavelength, which it can detect Options: A . &nbsp 1000 nm B . &nbsp 1703 nm C . &nbsp 500 nm D . &nbsp 173 nm E . &nbsp The frequency of modulated wave varies as frequency of carrier wave

Answer: Option B : B Limiting value of hv is E g , such that hv = h c λ = E g or λ = h c E g = 6.63 × 10 − 34 J − s × 3 × 10 8 m s − 1 0.73 × 1.6 × 10 − 19 J = 1703 nm

A photodetector is made from a semiconductor In 0.53Ga0.47As with Eg

Discussion Forum : Communication Systems

Question -

A photodetector is made from a semiconductor In $_{0.53} G a$ $_{0.47} A s$ with $E_{g}$ = 0.73 eV. What is the maximum wavelength, which it can detect

Options:

Answer: Option B
:
B

Limiting value of hv is $E_{g}$ , such that hv = $\frac{h c}{λ}$ = $E_{g}$
or $λ = \frac{h_{c}}{E_{g}} = \frac{6.63 \times 10^{- 34} J - s \times 3 \times 10^{8} m s^{- 1}}{0.73 \times 1.6 \times 10^{- 19} J}$
= 1703 nm

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