Photodiode(General Knowledge > General Science ) Questions and Answers

Question 1. What is the reason phototransistor produces more current than a photodiode?
  1.    A wider spectrum is accepted by the phototransistor than the photodiode
  2.    The phototransistor can heavily doped than the photodiode
  3.    The current produced by photons is amplified by the hfe of the transistor
  4.    At low light conditions, a photodiode is used.
Explanation:-
Answer: Option C. -> The current produced by photons is amplified by the hfe of the transistor
Question 2. In a photodiode, when there is no incident light, the reverse current is almost negligible and is called
  1.    PIN current
  2.    Photocurrent
  3.    Dark current
  4.    Zener current
Explanation:-
Answer: Option C. -> Dark current
Question 3. ___________ has more sophisticated structure than p-i-n photodiode
  1.    Avalanche photodiode
  2.    p-n junction diode
  3.    Zener diode
  4.    Varactor diode
Explanation:-
Answer: Option A. -> Avalanche photodiode
Question 4. In the development of photodiodes for mid-infrared and far-infrared transmission systems, lattice matching has been a problem when operating at wavelengths ____________
  1.    0.5 µm
  2.    1 µm
  3.    2 µm
  4.    Greater than 2 µm
Explanation:-
Answer: Option D. -> Greater than 2 µm
Question 5. HgCdTe material system is utilized to fabricate long-wavelength photodiodes
  1.    True
  2.    False
Explanation:-
Answer: Option A. -> True
Question 6. A avalanche photodiode has ___ number of heavily doped regions?
  1.    1
  2.    2
  3.    3
  4.    4
Explanation:-
Answer: Option B. -> 2
Question 7. The detection mechanism in ____________ relies on photo excitation of electrons from confined states in conduction band quantum wells
  1.    p-i-n detector
  2.    p-n photodiode
  3.    Avalanche photodiodes
  4.    Quantum-dot photo detector
Explanation:-
Answer: Option D. -> Quantum-dot photo detector
Question 8. Avalanche photodiodes based on HgCdTe are used for ______________ in both the near and far infrared
  1.    Dispersion
  2.    Ionization
  3.    Dislocation
  4.    Array applications
Explanation:-
Answer: Option D. -> Array applications
Question 9. Reverse saturation current or diode current of Photodiode is directly proportional to the intensity of light
  1.    True
  2.    False
Explanation:-
Answer: Option A. -> True
Question 10. The maximum wavelength of photons that can be detected by a photodiode made by a semiconductor of bandgap 2eV is about
  1.    620 nm
  2.    700 nm
  3.    740 nm
  4.    1240 nm
Explanation:-
Answer: Option A. -> 620 nm
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